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Identification technique of FET model based on vector nonlinear measurements

G. Avolio ; D. Schreurs ; A. Raffo ; G. Crupi ; Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; G. Vannini ; B. Nauwelaers
Electronics Letters (0013-5194). Vol. 47 (2011), 24, p. 1323-U37.
[Artikel, refereegranskad vetenskaplig]

A new modelling approach which exploits only vector nonlinear measurements is described. The parameters of the I-V and Q-V nonlinear constitutive functions are identified by combining low-and high-frequency large-signal measurements with a numerical optimisation routine. Low-frequency dispersion manifesting in the I-V characteristics is also correctly accounted for. As a case study a gallium nitride HEMT on silicon carbide substrate is considered and very good agreement between measurements and simulation is achieved.

Nyckelord: large-signal measurements, extraction

Denna post skapades 2011-12-22.
CPL Pubid: 150832


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur