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Broadband Gm-Boosted Differential HBT Doublers With Transformer Balun

J. Zhang ; M. Q. Bao ; Dan Kuylenstierna (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Sz-Hau Lai (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum)
IEEE Transactions on Microwave Theory and Techniques (0018-9480). Vol. 59 (2011), 11, p. 2953-2960.
[Artikel, övrig vetenskaplig]

Broadband monolithic InGaP HBT frequency doublers for K-band application have been developed. The designs employ a Gm-boosted differential common-base configuration using either capacitive or transformer-based coupling between base and emitters. To the authors' best knowledge, these are the first frequency doublers utilizing the Gm-boosted configuration and the result demonstrate larger bandwidth and higher output power than any previously reported frequency doublers. The design with cross-coupled capacitors presents a fundamental rejection better than 20 dB over a 100% 3-dB bandwidth, extending from 6 to 18 GHz. The transformer-coupled design has about 15-dB fundamental rejection over a slightly narrower bandwidth extending from 7 to 16 GHz. Both doublers have conversion gain peaking at more than -0.8 dB and output power Psat > 13 dBm. The designs are also very compact with chip sizes less than 0.5 mm(2).

Nyckelord: Capacitor-crossed coupling, frequency doubler, InGaP HBT, transformer, balun, transformer coupling, balanced frequency doubler, technology, design, phemt, cmos, lna



Denna post skapades 2011-12-16. Senast ändrad 2015-08-10.
CPL Pubid: 150231

 

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