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Extending the Best Linear Approximation to Characterize the Nonlinear Distortion in GaN HEMTs

Mattias Thorsell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Kristoffer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Guillaume Pailloncy ; Yves Rolain
IEEE Transactions on Microwave Theory and Techniques (0018-9480). Vol. 59 (2011), 12, p. 1-8.
[Artikel, refereegranskad vetenskaplig]

In this paper, the best linear approximation (BLA) is extended to include second-order nonlinearities. This extension is particularly useful for the analysis of low-frequency (LF) distortion due to self-mixing. The self-mixing of a modulated signal due to even-order nonlinear distortion creates a spectrum around dc, as well as around the high order even harmonics. The frequency response at dc can be used to determine long-term memory effects such as trapping and self-heating. The extended BLA is extracted for a GaN-based HEMT to analyze the LF distortion and demonstrate the possibilities with the proposed method.

Nyckelord: Linear approximation, linear characteristics, nonlinear distortion, gallium nitride (GaN), high electron-mobility transistors (HEMTs)

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Denna post skapades 2011-11-02. Senast ändrad 2014-09-02.
CPL Pubid: 148056


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