CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

Selective chemically assisted ion beam etching of Si, polysilicon, and SiO2 using Ni-Cr masks and Cl2

Zhaohua Xiao (Institutionen för fasta tillståndets elektronik) ; Bengt Nilsson (Institutionen för fysik) ; P. Svedberg
Journal of the Electrochemical Society (0013-4651). Vol. 137 (1990), p. 1579-1581.
[Artikel, refereegranskad vetenskaplig]

The etching of single-crystal silicon, CVD polysilicon, thermally grown silicon oxides, and Ni-Cr masks have been studied using a chemical-assisted ion beam etching (CAIBE) process. Etch rates were measured as functions of Cl2 gas flow rate, Ar+ ion beam energy, and beam current density. Selectivities of Ni-Cr:Si, Ni-Cr:poly, and Ni-Cr:SiO2 of 1:10, 1:9, and 1:4 were determined. Vertical profiles were obtained down to at least 100 nm linewidths using CAIBE

Nyckelord: elemental semiconductors, semiconductor thin films, silicon, silicon compounds, sputter etching

Den här publikationen ingår i följande styrkeområden:

Läs mer om Chalmers styrkeområden  

Denna post skapades 2011-10-21. Senast ändrad 2011-11-02.
CPL Pubid: 147585


Institutioner (Chalmers)

Institutionen för fasta tillståndets elektronik (1985-1998)
Institutionen för fysik (1900-2003)


Nanovetenskap och nanoteknik

Chalmers infrastruktur