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Resistance in sub-m size GaAs lines

A. Rouhani-Kalleh (Institutionen för fysik) ; Thorvald Andersson (Institutionen för fysik) ; Bengt Nilsson (Institutionen för fysik) ; J. Westin (Institutionen för fysik)
Superlattices and Microstructures (0749-6036). Vol. 3 (1987), 4, p. 417-419.
[Artikel, refereegranskad vetenskaplig]

The electrical resistance in GaAs submicron mesa lines has been studied as a function of the line width. Using molecular beam epitaxy two types of conducting layers were made: an n+-layer and a two-dimensional electron gas confined to an (AlGa)As/GaAs heterostructure. Processing of the lines was made by photolithography, electron beam lithography and ion etching. Resistance data at 77 K and 300 K are discussed for line widths in the interval 0.2 to 5 m. A size dependent conduction was found and interpreted in terms of geometry induced limitation of the effective conducting path

Nyckelord: electric resistance, electron beam lithography, gallium arsenide, III-V semiconductors, integrated circuit technology, one-dimensional conductivity, photolithography, size effect, sputter etching

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Denna post skapades 2011-10-21. Senast ändrad 2011-10-26.
CPL Pubid: 147580


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