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Electric field effects and screening in mesoscopic bismuth wires

V. T. Petrashov (Institutionen för fysik) ; V. N. Antonov (Institutionen för fysik) ; Bengt Nilsson (Institutionen för fysik)
Journal of Physics: Condensed Matter (0953-8984). Vol. 3 (1991), Copyright 1992, IEE, p. 9705-11.
[Artikel, refereegranskad vetenskaplig]

Large time-independent conduction fluctuations were observed as a function of transverse electric field in thin (25 nm) and narrow (60 nm) bismuth wires. The conduction of leads far away from a gate capacitor was influenced by changes in the gate voltage. The effects are interpreted as being due to a variation in the Fermi wavelength caused by gate-induced changes in the charge concentration of the leads rather than an electrostatic Aharonov-Bohm-type interference. The screening of charge is strongly reduced in narrow wires

Nyckelord: bismuth, electrical conductivity transitions, quantum interference devices, quantum interference phenomena, semiconductor quantum wires

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Denna post skapades 2011-10-21. Senast ändrad 2011-11-02.
CPL Pubid: 147579


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