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Impedance of Hot-Electron Bolometer Mixers at Terahertz Frequencies

Erik L. Kollberg (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; Sigfrid Yngvesson ; Yuan Ren ; Wen Chang ; Pourya Khosropanah ; Jian-Rong Gao
IEEE Transactions on Terahertz Science and Technology (2156-342X). Vol. 1 (2011), 2, p. 383-389.
[Artikel, refereegranskad vetenskaplig]

This paper discusses the current distribution in thin-film devices, especially in a hot-electron bolometer (HEB) mixer at terahertz frequencies, and the consequences of different current distributions on the device impedance. We first present an approximate analytical model from which we derive a proposed rule of thumb for deciding when the film is thin enough to support a current distribution that is uniform in the transverse direction. We then verify this rule by performing electromagnetic simulations. Our conclusion is that the current distribution in thin films with a relatively high DC resistivity and small film thickness with respect to the skin depth is essentially uniform up to 8 THz. These results are crucial, e.g., for understanding radiation coupling between an HEB and an antenna and indispensable when analyzing detectors and receivers based on bolometric properties of thin films.

Nyckelord: Electromagnetic simulations, hot-electron bolometers (HEBs), low-noise mixer receivers, terahertz, thin-film devices

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Denna post skapades 2011-09-14. Senast ändrad 2011-10-27.
CPL Pubid: 146205


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