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Highly efficient GaN-HEMT power amplifiers at 3.5 GHz and 5.5 GHz

Paul Saad (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Hossein Mashad Nemati (GigaHertz Centrum) ; Kristoffer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Christian Fager (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum)
2011 IEEE 12th Annual Wireless and Microwave Technology Conference, WAMICON 2011 (2011)
[Konferensbidrag, refereegranskat]

This paper reports the design, implementation, and experimental results of two high efficiency GaN-HEMT power amplifiers (PAs) at 3.5 GHz and 5.5 GHz. A bare-die approach is used to eliminate package parasitics in conjunction with an in-house transistor model that enables investigation of the transistor intrinsic waveforms. With this as a basis, harmonic source-pull/load-pull simulations have been used to design and implement two state-of-the-art highly efficient harmonically tuned PAs. For the 3.5-GHz PA, large-signal measurement results show a PAE of 80%, a power gain of 15.5 dB, and an output power of 7 W, while for the 5.5-GHz PA, 5.6 W output power, 12.5 dB power gain, and 70% PAE are achieved.

Nyckelord: gallium nitride (GaN), harmonic termination, high electron mobility transistor (HEMT), power amplifier (PA), power-added efficiency (PAE)



Denna post skapades 2011-08-25. Senast ändrad 2015-12-17.
CPL Pubid: 145004

 

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