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The influence of inhomogeneous trap distribution on results of DLTS study

M. Kaczmarczyk ; M. Kaniewska ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
Microelectronics Reliability (0026-2714). Vol. 51 (2011), 7, p. 1159-1161.
[Artikel, refereegranskad vetenskaplig]

A model is developed to describe how a narrow distribution of deep traps adjacent to quantum dots (QDs) influences the trap-related signals measured by frequency scanned deep level transient spectroscopy (FS-DLTS). By comparison with experiment, it is demonstrated that traps with a steep concentration gradient, positioned in the so called transition layer close to the edge of the depletion region ("lambda-effect"), have a strong influence on DLTS signal amplitudes. This is manifested by an extreme sensitivity to the change in the Fermi-level position when temperature is varied.

Nyckelord: molecular-beam epitaxy, electron traps, semiconductors, spectroscopy, and n, 1989, v7, p399



Denna post skapades 2011-08-09.
CPL Pubid: 143900

 

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