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Semi-physical nonlinear circuit model with device/physical parameters for HEMTs

Hiroshi Otsuka ; Toshiyuki Oishi ; Koji Yamanaka ; Mattias Thorsell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Kristoffer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Akira Inoue ; Yoshihito Hirano ; Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum)
International Journal of Microwave and Wireless Technologies (1759-0787). Vol. 3 (2011), 1, p. 25-33.
[Artikel, refereegranskad vetenskaplig]

A nonlinear circuit model (NCM) with physical parameters is proposed for direct simulation of the RF characteristics of GaN high-electron-mobility transistors (GaN HEMTs) on the basis of device structure. The physical equations are used for the construction of the model in order to connect strongly the model parameters with the device/physical parameters. Hyperbolic tangent functions are used as the model equations to ensure good model convergence and rapid simulation (short simulation time). The usefulness of these equations is confirmed by technology computer aided design (TCAD) simulation. The number of model parameters for the nonlinear components (Ids, Cgs, Cgd) is reduced to 17 by using common physical parameters for modeling the drain current and capacitance. The accuracy of this model is verified by applying to GaN HEMTs. The modeled I–V and capacitance characteristics agree well with the measurement data over a wide voltage range. Furthermore, this model can be used for the accurate evaluation of S-parameters and large-signal RF characteristics.

Nyckelord: Transistor models, GaN HEMT, Simulation, Power amplifiers, Physical modeling, Microwave

Denna post skapades 2011-08-08. Senast ändrad 2014-09-02.
CPL Pubid: 143838


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