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Electron eigenstates in quantum dots revealed by temperature derivative capacitance spectroscopy

Jung W ; G. Zaremba ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; M. Kaniewska
Journal of Nanoscience and Nanotechnology (1533-4880). Vol. 11 (2011), p. 1.
[Artikel, refereegranskad vetenskaplig]

A novel method is presented for detecting confined energy states in quantum dots embedded in a junction space charge region, where the reverse bias is used to discharge the initially occupied energy levels. By determining the temperature derivative of junction capacitance as a function of bias voltage and temperature, spectra are obtained with peaks revealing the existence of electron states in InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy. The method is compared with admittance based techniques and theory used earlier for interpretation of experimental data.



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Denna post skapades 2011-07-28. Senast ändrad 2013-08-21.
CPL Pubid: 143697

 

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