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Hole emission mechanism in Ge/Si quantum dots

M. Kaniewska ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; A. Karmous ; O. Kirfel ; E. Kasper ; Bahman Raeissi (Institutionen för mikroteknologi och nanovetenskap) ; Johan Piscator (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ) ; G. Zaremba ; M Kaczmarczyk ; B. Surma ; A. Winuk ; M. Wzorek ; A. Czerwinski
Physica Status Solidi C (1862-6351). Vol. 8 (2011), 2, p. 411 -413.
[Artikel, refereegranskad vetenskaplig]

The mechanisms determining emission of holes in self-assembled Ge quantum dots (QDs) embedded in the p-type Si matrix have been investigated. Specimens were prepared by molecular beam epitaxy (MBE). Electrical methods such as deep level transient spectroscopy (DLTS) and capacitance versus voltage (C-V) measurements were used for the study. The emission mechanisms were identified by measuring a QD-related signal as a function of the repetition frequency of the filling pulses with the reverse voltage and the pulse voltage as a parameter. An observed shift of the signal position or its absence versus the voltage parameters was interpreted in terms of thermal, tunnelling and mixed processes and attributed to the presence of a Coulomb barrier formed as a result of the charging effect. Thermal emission properties of the QDs were characterized under such measurement conditions that tunnelling contributions to the DLTS spectra could be neglected. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nyckelord: DLTS; Ge/Si; MBE; Self-assembled quantum dots

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Denna post skapades 2011-07-28. Senast ändrad 2016-07-25.
CPL Pubid: 143696