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Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

Jie Sun (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Niclas Lindvall (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; M. T. Cole ; K. B. K. Teo ; Avgust Yurgens (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Applied Physics Letters (0003-6951). Vol. 98 (2011), 25,
[Artikel, refereegranskad vetenskaplig]

Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si3N4/Si at 1000 degrees C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the sp(2) graphitic structures. The films show ohmic behavior with a sheet resistance of similar to 2.3-10.5 k Omega/square at room temperature. An electric field effect of similar to 2-10% (V-G=-20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes.

Nyckelord: carbon, chemical vapour deposition, electric resistance, pyrolysis, Raman spectra, self-assembly, thin films, transistors, electrodes



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Denna post skapades 2011-07-14. Senast ändrad 2011-11-15.
CPL Pubid: 143442

 

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