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Impact of Eddy Currents and Crowding Effects on High Frequency Losses in Planar Schottky Diodes

Aik Yean Tang (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ; GigaHertz Centrum) ; Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik ; GigaHertz Centrum)
IEEE Transactions on Electron Devices (0018-9383). Vol. 58 (2011), 10, p. 3260-3269.
[Artikel, refereegranskad vetenskaplig]

In this paper, we present the influence of eddy currents, skin and proximity effects on high-frequency losses in planar terahertz Schottky diodes. The high-frequency losses, particularly losses due to the spreading resistance, are analyzed as a function of the ohmic-contact mesa geometry for frequencies up to 600 GHz. A combination of 3-D electromagnetic (EM) simulations and parameter extraction based on lumped equivalent circuit is used for the analysis. The extracted low-frequency spreading resistance shows a good agreement with the results from electrostatic simulations and experimental data. By taking into consideration the EM field couplings, the analysis shows that the optimum ohmic-contact mesa thickness is approximately one-skin depth at the operating frequency. It is also shown that, for a typical diode, the onset of eddy current loss starts at ∼200 GHz, and the onset of a mixture of skin and proximity effects occurs around ∼400 GHz.

Nyckelord: Current distribution, electromagnetic coupling, eddy current, geometric modeling, resistance, parameter extraction, proximity effect, Schottky diodes, skin effect, submillimeter wave devices, submillimeter wave integrated circuits.

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Denna post skapades 2011-07-11. Senast ändrad 2014-09-02.
CPL Pubid: 143349


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