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Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

P. Laukkanen ; M. P. J. Punkkinen ; J. Lang ; M. Tuominen ; M. Kuzmin ; V. Tuominen ; J. Dahl ; J. Adell ; J. Sadowski ; Janusz Kanski (Institutionen för teknisk fysik, Fasta tillståndets fysik) ; V. Polojarvi ; J. Pakarinen ; K. Kokko ; M. Guina ; M. Pessa ; I. J. Vayrynen
Applied Physics Letters (0003-6951). Vol. 98 (2011), 23,
[Artikel, refereegranskad vetenskaplig]

Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.

Nyckelord: molecular-beam epitaxy, passivation, gaas, interface, gaas(001), silicon

Denna post skapades 2011-07-06. Senast ändrad 2015-07-08.
CPL Pubid: 143126


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Institutioner (Chalmers)

Institutionen för teknisk fysik, Fasta tillståndets fysik (2005-2015)


Teknisk fysik

Chalmers infrastruktur