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Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

Tjbm Janssen ; A. Tzalenchuk ; R. Yakimova ; Sergey Kubatkin (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Samuel Lara-Avila (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; S. Kopylov ; V. I. Fal'ko
Physical Review B (1098-0121). Vol. 83 (2011), 23,
[Artikel, refereegranskad vetenskaplig]

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.

Nyckelord: resistance standard, quantum capacitance, gas

Denna post skapades 2011-06-23. Senast ändrad 2015-10-22.
CPL Pubid: 142357


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik



Chalmers infrastruktur



Denna publikation är ett resultat av följande projekt:

New Electronics Concept: Wafer-Scale Epitaxial Graphene (CONCEPTGRAPHENE) (EC/FP7/257829)