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A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

Christer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Niclas Ejebjörk (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; A. Henry ; S. Andersson ; E. Janzen ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IEEE Electron Device Letters (0741-3106). Vol. 32 (2011), 6, p. 788-790.
[Artikel, refereegranskad vetenskaplig]

SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.

Nyckelord: Interdigitated, load modulation, power amplifiers (PAs), Schottky, diodes, self-aligned, SiC, tuning range, varactors, silicon-carbide, diodes



Denna post skapades 2011-06-13. Senast ändrad 2015-08-10.
CPL Pubid: 141587

 

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