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Higher speed VCSELs by photon lifetime reduction

Petter Westbergh (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Johan S. Gustavsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Benjamin Kögel (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Åsa Haglund (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; A. Joel
Proceedings of SPIE - The International Society for Optical Engineering. Vertical-Cavity Surface-Emitting Lasers XV; San Francisco, CA; 26-27 January 2011 (0277-786X). Vol. 7952 (2011),
[Konferensbidrag, övrigt]

The impedance characteristics and the effects of photon lifetime reduction on the performance of high-speed 850 nm VCSELs are investigated. Through S 11 measurements and equivalent circuit modeling we show that the parasitic mesa capacitance can be significantly reduced by using multiple oxide layers. By performing a shallow surface etch (25 - 55 nm) on the fabricated VCSELs, we are able to reduce the photon lifetime by up to 80% and thereby significantly improve both static and dynamic properties of the VCSELs. By optimizing the photon lifetime we are able to enhance the 3dB modulation bandwidth of 7 μm oxide aperture VCSELs from 15 GHz to 23 GHz and finally demonstrate errorfree transmission at up to 40 Gbit/s.

Nyckelord: damping, electrical parasitics, high speed modulation, VCSEL

Denna post skapades 2011-06-08. Senast ändrad 2016-04-11.
CPL Pubid: 141420


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik



Chalmers infrastruktur