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Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

J. J. K. Lang ; P. Laukkanen ; M. P. J. Punkkinen ; M. Ahola-Tuomi ; M. Kuzmin ; V. Tuominen ; J. Dahl ; M. Tuominen ; R. E. Perala ; K. Schulte ; Johan Adell (Institutionen för teknisk fysik, Fasta tillståndets fysik) ; J. Sadowski ; Janusz Kanski (Institutionen för teknisk fysik, Fasta tillståndets fysik) ; M. Guina ; M. Pessa ; K. Kokko ; B. Johansson ; L. Vitos ; I. J. Vayrynen
Surface Science (0039-6028). Vol. 605 (2011), 9-10, p. 883-888.
[Artikel, refereegranskad vetenskaplig]

Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.

Nyckelord: Ab initio calculations, Scanning-tunneling microscopy, Synchrotron, radiation photoelectron spectroscopy, Surface reconstruction, Gallium-arsenide (GaAs), Indium-arsenide (InAs), Single crystal surfaces, total-energy calculations, molecular-beam epitaxy, augmented-wave, method, sn-doped gaas, basis-set, surface, dynamics, growth, metals, state



Denna post skapades 2011-05-16. Senast ändrad 2014-03-24.
CPL Pubid: 140730

 

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Institutioner (Chalmers)

Institutionen för teknisk fysik, Fasta tillståndets fysik (2005-2015)

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Fysikalisk kemi

Chalmers infrastruktur