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Optimization of SiC MESFET for high power and high frequency applications

Niclas Ejebjörk (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Peder Bergman ; Björn Magnusson ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. Sundvolden Conf Ctr, Oslo, NORWAY, AUG 29-SEP 02, 2010 (0255-5476). Vol. 679-680 (2011), p. 629-632.
[Konferensbidrag, refereegranskat]

SiC MESFETs were scaled both laterally and vertically to optimize high frequency and high power performance. Two types of epi-stacks of SiC MESFETs were fabricated and measured. The first type has a doping of 3×10^17 cm-3 in the channel and the second type has higher doping (5×10^17 cm-3) in the channel. The higher doping allows the channel to be thinner for the same current density and therefore a reduction of the aspect ratio is possible. This could impede short channel effects. For the material with higher channel doping the maximum transconductance is 58 mS/mm. The maximum current gain frequency, fT, and maximum frequency of oscillation, fmax, is 9.8 GHz and 23.9 GHz, and 12.4 GHz and 28.2 GHz for the MESFET with lower doped channel and higher doping, respectively.

Nyckelord: DC Measurements, High Doped Channel, High Frequency, High Power, MESFET, SiC, Silicon Carbide (SiC), Small-Signal Measurements

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Denna post skapades 2011-04-21. Senast ändrad 2017-08-18.
CPL Pubid: 139690


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