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Characterization of Traps in the Transition Region at the HfO2/SiOx Interface by Thermally Stimulated Currents

Bahman Raeissi (Institutionen för mikroteknologi och nanovetenskap) ; Johan Piscator (Institutionen för mikroteknologi och nanovetenskap) ; Y. Y. Chen ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik )
Journal of the Electrochemical Society (0013-4651). Vol. 158 (2011), 3, p. G63-G70.
[Artikel, refereegranskad vetenskaplig]

Thermally stimulated currents (TSCs) have been measured to investigate electron traps in HfO2 prepared by reactive sputtering on silicon. Broken planes of the silicon crystal, which may contribute to the occurrence of interface states, were identified between the silicon and SiOx interlayer by transmission electron microscopy (TEM). A second domain was found between SiOx and HfO2 constituting a gradual transition region between the two oxides. This interface region was found to be a source of unstable charge traps where captured electrons interact with the silicon energy states through a combined tunneling and thermal process.

Nyckelord: oxide-semiconductor capacitors, ultrathin hafnium oxide, gate stacks, dielectric interfaces, generation statistics, internal interfaces, border traps, metal, hfo2, defects

Denna post skapades 2011-04-07. Senast ändrad 2016-10-27.
CPL Pubid: 138798


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