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Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

H. Rodilla ; T. Gonzalez ; Giuseppe Moschetti (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; J. Mateos
Semiconductor Science and Technology (0268-1242). Vol. 26 (2011), 2,
[Artikel, refereegranskad vetenskaplig]

In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, n(s), have been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cutoff frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of n(s) shifts the maximum of the transconductance and intrinsic cutoff frequency to higher values of drain current and improves the agreement with the experimental results.

Nyckelord: electron-mobility transistors, low-noise, performance, alsb/inas



Denna post skapades 2011-02-10. Senast ändrad 2011-12-15.
CPL Pubid: 136687

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur

 


Projekt

Denna publikation är ett resultat av följande projekt:


Semiconductor nanodevices for room temperature THz emission and detection (ROOTHZ) (EC/FP7/243845)