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Dielectric Properties of SiC nanowires With Different Chemical Compositions

Anna Jänis ; Yiming Yao (Institutionen för material- och tillverkningsteknik, Materialteknologi) ; Uta Klement (Institutionen för material- och tillverkningsteknik, Yt- och mikrostrukturteknik)
IEEE Transactions on Nanotechnology (1536-125X). Vol. 10 (2011), 4, p. 751-756.
[Artikel, refereegranskad vetenskaplig]

The investigated SiC nanowires were prepared by the “Shape Memory Process” technique. Depending on the processing parameters, nanowires with different chemical compositions, i.e. with varying amount of Si, C and O were obtained. The permittivity of the SiC nanowires was measured in the frequency range between 1 and 18 GHz which revealed that the permittivity, both real and imaginary parts, depends mostly on the C-content of the nanowires. A higher C concentration in the nanowires gives rise to a higher permittivity.

Nyckelord: Carbon, Carbon content, Dielectrics, Nanowires, Permittivity, Silicon, Silicon carbide, dielectric measurements, permittivity, silicon carbide nanowires



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Denna post skapades 2011-01-12. Senast ändrad 2016-07-05.
CPL Pubid: 133235

 

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