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IMPROVING GAN/ALGAN/GAN HFET TRANSCONDUCTANCE AND GATE LEAKAGE BY REDUCING THE ELECTRON SHEET DENSITY THROUGH HIGH TEMPERATURE ANNEALING

Martin Fagerlind (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
The 34th Workshop on Compound Semiconductor Devices and Integrated Circuits (2010)
[Konferensbidrag, refereegranskat]

An LPCVD silicon nitride is used to passivate GaN/AlGaN/GaN heterostructures. The nitride is deposited before the high temperature annealing step that is used to form ohmic contacts. The contact annealing will reduce the electron sheet density of a non-passivated heterostructure, but is seen to have almost no effect on the LPCVD passivated heterostructure. From a first examination the reduction of ns is a negative effect. However, in this report it is shown that introducing an extra annealing step before the LPCVD deposition can be used to improve device characteristics. A pre-LPCVD annealing at 800°C reduces ns by 15%, resulting in: almost no change in sheet resistance, around 40% larger transconductance and a substantially lower gate current.



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Denna post skapades 2011-01-10. Senast ändrad 2015-07-28.
CPL Pubid: 132769