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Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam deposition

Y. Y Gomeniuk ; Y. V. Gomieniuk ; A. N. Nazarov ; P. K. Hurley ; K. Cherkaoui ; S Monaghan ; H. D. B. Gottlob ; M. Schmidt ; J. Schubert ; J.M.J Lopes ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik)
8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting; Las Vegas, NV; United States; 11 October 2010 through 15 October 2010 (1938-5862). Vol. 33 (2010), 3, p. 221-227.
[Konferensbidrag, refereegranskat]

The paper presents the results of electrical characterization in the wide temperature range (120-320 K) of the interface and bulk properties of high-k LaLuO3 dielectric deposited by molecular beam deposition (MBD) on silicon substrate. The energy distribution of interface state density is presented and typical maxima of 1.2×1011 and 2.5×10 11 eV-1 cm-2 were found at about 0.25-0.3 eV from the silicon valence band. The charge carrier transport through the dielectric at the forward bias was found to occur via Poole-Frenkel mechanism, while variable range hopping conduction (Mott's law) controls the current at the reverse bias.

Denna post skapades 2010-12-29. Senast ändrad 2016-07-01.
CPL Pubid: 132076


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)


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Nanovetenskap och nanoteknik

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