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Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

B. G. Vasallo ; H. Rodilla ; T. Gonzalez ; Giuseppe Moschetti (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; J. Mateos
Journal of Applied Physics (0021-8979). Vol. 108 (2010), 9,
[Artikel, refereegranskad vetenskaplig]

A semiclassical two-dimensional ensemble Monte Carlo simulator is used to perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors (HEMTs). Kink effect, this is, an anomalous increase in the drain current I-D when increasing the drain-to-source voltage V-DS, leads to a reduction in the gain and a rise in the level of noise, thus limiting the utility of these devices for microwave applications. Due to the small band gap of InAs, InAs/AlSb HEMTs are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. The results indicate that, when V-DS is high enough for the onset of impact ionization, holes thus generated tend to pile up in the buffer (at the gate-drain side) due to the valence-band energy barrier between the buffer and the channel. Due to this accumulation of positive charge the channel is further opened and I-D increases, leading to the kink effect in the I-V characteristics and eventually to the device electrical breakdown. The understanding of this phenomenon provides useful information for the development of kink-effect-free InAs/AlSb HEMTs.

Nyckelord: impact ionization, hemts, simulation, noise, semiconductors, performance, transport, holes, inas

Denna post skapades 2010-12-16. Senast ändrad 2015-07-08.
CPL Pubid: 131089


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



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Denna publikation är ett resultat av följande projekt:

Semiconductor nanodevices for room temperature THz emission and detection (ROOTHZ) (EC/FP7/243845)