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Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature

Anelia Kakanakova-Georgieva ; Daniel Nilsson ; Martin Stattin (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Urban Forsberg ; Åsa Haglund (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Erik Janzén
physica status solidi (RRL) – Rapid Research Letters (1862-6254). Vol. 4 (2010), 11, p. 311-313.
[Artikel, refereegranskad vetenskaplig]

We report on the hot-wall MOCVD growth of Mg-doped Alx Ga1–xN layers with an Al content as high as x ∼ 0.85. After subjecting the layers to post-growth in-situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 kΩ cm was obtained indicating an enhanced p-type conductivity compared to published data for Alx Ga1–xN layers with a lower Al content of x ∼ 0.70 and a room temperature resistivity of about 10 kΩ cm. It is believed that the enhanced p-type conductivity is a result of reduced compensation by native defects through growth conditions enabled by the distinct hot-wall MOCVD system.

Nyckelord: MOCVD, epitaxy, high-Al-content AlGaN, p-type semiconductors, electrical properties



Denna post skapades 2010-11-24. Senast ändrad 2016-04-11.
CPL Pubid: 129465

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik

Ämnesområden

Halvledarfysik
Fotonik

Chalmers infrastruktur

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