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Sb-HEMT: Toward 100-mV Cryogenic Electronics

A. Noudeviwa ; Y. Roelens ; F. Danneville ; A. Olivier ; N. Wichmann ; N. Waldhoff ; S. Lepilliet ; G. Dambrine ; L. Desplanque ; X. Wallart ; Giuseppe Moschetti (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Jan Grahn (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; S. Bollaert
IEEE Transactions on Electron Devices (0018-9383). Vol. 57 (2010), 8, p. 1903-1909.
[Artikel, refereegranskad vetenskaplig]

In this paper, we present a first full set of characteristics (dc, f(T), f(max), and noise) of InAs/AlSb high-electron mobility transistors (HEMTs) operating under cryogenic temperature and low-power conditions. Those results are systematically compared and deeply analyzed at room temperature and 77 K. The characteristics improvement achieved at 77 K open up the possibility to develop ultralow-power cryogenic electronics (low-noise amplifier), featuring excellent high-frequency/noise performances below 100-mV dc biasing.

Nyckelord: Antimonide-based compound semiconductor, cryogenic electronics, high-electron mobility transistors (HEMTs), III-V semiconductors, impact ionization, InAs/AlSb, low-power electronics, field-effect transistors, alsb/inas hemts, inas/alsb hemt, high-frequency, noise, temperature, amplifier, mosfet

Denna post skapades 2010-11-15. Senast ändrad 2012-02-22.
CPL Pubid: 129065


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur