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TiN thin film resistors for monolithic microwave integrated circuits

Anna Malmros (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Mattias Südow (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Kristoffer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Niklas Rorsman (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Journal of Vacuum Science and Technology B (1071-1023). Vol. 28 (2010), 5, p. 912-915.
[Artikel, refereegranskad vetenskaplig]

Titanium nitride (TiN) thin film resistors (TFRs) have been fabricated by reactive sputter deposition. The TFRs were characterized in terms of composition, thickness, and resistance. Furthermore, a first assessment of the resistor reliability was made by measurements of the resistivity (rho) versus temperature, electrical stress, long-term stability, and thermal infrared measurements. TiN layers with thicknesses up to 3560 angstrom, corresponding to a sheet resistance (R-s) of 10 Omega/square, were successfully deposited without any signs of stress in the films. The critical dissipated power (P-c) showed a correlation with the resistor footprint-area indicating that Joule-heating was the main cause of failure. This was partly substantiated by the thermal infrared measurements.

Nyckelord: electrical resistivity, monolithic integrated circuits, thin film, resistors, titanium compounds, mmic process



Denna post skapades 2010-11-04. Senast ändrad 2015-07-28.
CPL Pubid: 128626

 

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