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Charge transfer between epitaxial graphene and silicon carbide

S. Kopylov ; A. Tzalenchuk ; Sergey Kubatkin (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; V. I. Fal'ko
Applied Physics Letters (0003-6951). Vol. 97 (2010), 11,
[Artikel, refereegranskad vetenskaplig]

We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates.

Nyckelord: charge exchange, electron density, epitaxial growth, graphene, monolayers, semiconductor doping, semiconductor epitaxial layers, silicon compounds, work function, bilayer graphene, transistors



Denna post skapades 2010-10-27. Senast ändrad 2015-07-08.
CPL Pubid: 128173

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik

Ämnesområden

Fysik

Chalmers infrastruktur

 


Projekt

Denna publikation är ett resultat av följande projekt:


New Electronics Concept: Wafer-Scale Epitaxial Graphene (CONCEPTGRAPHENE) (EC/FP7/257829)