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On the Large Signal Evaluation and Modeling of GaN FET

Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Mattias Thorsell (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Kristoffer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; A. Inoue ; Y. Koji ; H. Noto
Ieice Transactions on Electronics (0916-8524). Vol. E93C (2010), 8, p. 1225-1233.
[Artikel, refereegranskad vetenskaplig]

The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.

Nyckelord: GaN, FET, small signal and large signal models, equivalent-circuit, frequency-dependence, mesfet model, resistance, hfets



Denna post skapades 2010-09-20. Senast ändrad 2014-09-02.
CPL Pubid: 126596

 

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