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Design of a Highly Efficient 2–4-GHz Octave Bandwidth GaN-HEMT Power Amplifier

Paul Saad (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Christian Fager (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Haiying Cao (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum) ; Kristoffer Andersson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik ; GigaHertz Centrum)
IEEE Transactions on Microwave Theory and Techniques (0018-9480). Vol. 58 (2010), 7, p. 1677-1685.
[Artikel, refereegranskad vetenskaplig]

In this paper, the design, implementation, and experimental results of a high-efficiency wideband GaN-HEMT power amplifier are presented. A method based on source–pull/load–pull simulation has been used to find optimum source and load impedances across the bandwidth and then used with a systematic approach to design wideband matching networks. Large-signal measurement results show that, across 1.9–4.3 GHz, 9–11-dB power gain and 57%–72% drain efficiency are obtained while the corresponding power-added efficiency (PAE) is 50%–62%. Moreover, an output power higher than 10 W is maintained over the band. Linearized modulated measurements using a 20-MHz long-term evolution signal with 11.2-dB peak-to-average ratio show an average PAE of 27% and 25%, an adjacent channel leakage ratio of -44 and -42 dBc at 2.5 and 3.5 GHz, respectively.

Nyckelord: GaN HEMT , high efficiency, octave bandwidth, power amplifier (PA), wideband matching networks


Article number 5473126



Denna post skapades 2010-09-13. Senast ändrad 2016-06-30.
CPL Pubid: 126178

 

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