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Dislocation-induced composition profile in alloy semiconductors

H. Ye ; P. F. Lu ; Z. Y. Yu ; D. L. Wang ; Z. H. Chen ; Y. M. Liu ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Solid State Communications (0038-1098). Vol. 150 (2010), 29-30, p. 1275-1278.
[Artikel, refereegranskad vetenskaplig]

We present a novel computational method by combining the finite element method and the method of moving asymptotes to study the dislocation-induced composition profile in alloy semiconductors. Segregated cylindrical nanoscale regions appear around the dislocation core. We find that the dominant driving force of non-uniform composition is strain contribution. Moreover, the method can be applied to the dislocated nanoscale heterostructures which are inaccessible by atomic treatment. (C) 2010 Elsevier Ltd. All rights reserved.

Nyckelord: Semiconductors, Nanostructures, Mechanical properties, finite-element-method, critical thickness, quantum-dots, nanocrystals, nanowires

Denna post skapades 2010-08-10.
CPL Pubid: 124273


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik


Elektroteknik och elektronik

Chalmers infrastruktur