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L-Band LDMOS Power Amplifiers Based on an Inverse Class-F Architecture

Fabien Lepine (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Andreas Ådahl (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IEEE Transactions on Microwave Theory and Techniques Vol. 53 (2005), 6, p. 2007-2012.
[Artikel, refereegranskad vetenskaplig]

Two inverse Class F power amplifiers working at 1 GHz and 1.8 GHz respectively have been developed. The PAs use a LDMOS transistor as an active element in order to generated high efficiency with high output power. The 1 GHz PA achieved a drain efficiency of 77.8 % with 12.4 W of output power and the 1.8 GHz PA a drain efficiency of 60 % with 13 W of output power. To our knowledge these results represent the highest efficiency and output power for an inverse Class F PA based on a single LDMOS transistor working at these frequencies.



Denna post skapades 2006-08-29. Senast ändrad 2015-08-10.
CPL Pubid: 12307

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Elektronik

Chalmers infrastruktur