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Field and current-induced magnetization reversal studied through spatially resolved point-contacts

Magne Saxegaard ; DeZheng Yang ; Erik Wahlström ; Rimantas Bručas (Institutionen för teknisk fysik, Fasta tillståndets fysik) ; Maj Hanson (Institutionen för teknisk fysik, Fasta tillståndets fysik)
Journal of Applied Physics (0021-8979). Vol. 107 (2010), 10, p. 103909.
[Artikel, refereegranskad vetenskaplig]

We present results from scanning tunneling microscopy based point-contact measurements of the local resistance in octagon shaped, Co(20 nm)/Cu (5 nm)/Fe(19)Ni(81)(2.5 nm) spin-valve rings. Through this technique one can detect the magnetoresistance with spatial resolution, and link it to magnetic domain wall motion within the ring. Measurements with varying currents indicate current-induced effects leading to offsets in the magnetic fields required for magnetic switching. The offsets can be attributed to current-induced spin-transfer torque effects for the thin Fe(19)Ni(81) layer and to Oersted field effects for the thick Co layer.

Denna post skapades 2010-06-14. Senast ändrad 2017-10-02.
CPL Pubid: 122803


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Institutioner (Chalmers)

Institutionen för teknisk fysik, Fasta tillståndets fysik (2005-2015)



Chalmers infrastruktur