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Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces

P. Laukkanen ; M. P. J. Punkkinen ; M. Ahola-Tuomi ; J. Lang ; K. Schulte ; A. Pietzsch ; M. Kuzmin ; J. Sadowski ; Johan Adell (Institutionen för teknisk fysik, Fasta tillståndets fysik) ; R. E. Perala ; M. Ropo ; K. Kokko ; L. Vitos ; B. Johansson ; M. Pessa ; I. J. Vayrynen
Journal of Electron Spectroscopy and Related Phenomena (0368-2048). Vol. 177 (2010), 1, p. 52-57.
[Artikel, refereegranskad vetenskaplig]

We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the atomic structures of the III-V(1 00)c(8 x 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III-V(1 00)c(8 x 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated zeta and zeta a SCLS values shows that the InSb spectra are reproduced by the zeta SCLSs better than by the zeta a SCLSs. Interestingly, the zeta a fits agree better with the InAs spectra than the zeta fits do, indicating that the zeta a model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III-V(1 0 0)c(8 x 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges. (C) 2010 Elsevier B.V. All rights reserved.

Nyckelord: Surface core-level shift (SCLS), Synchrotron radiation photoelectron, spectroscopy, Ab initio calculations, Surface reconstruction, Indium, arsenide (InAs), Indium antimonide (InSb), INITIO MOLECULAR-DYNAMICS, TOTAL-ENERGY CALCULATIONS, AUGMENTED-WAVE, METHOD, CHARGE-TRANSFER, COMPOUND SEMICONDUCTORS, GAAS(001) SURFACE, BASIS-SET, PHOTOEMISSION, RECONSTRUCTION, ADSORPTION

Denna post skapades 2010-06-01. Senast ändrad 2014-03-24.
CPL Pubid: 122191


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Institutionen för teknisk fysik, Fasta tillståndets fysik (2005-2015)


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Chalmers infrastruktur