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On the High Frequency De-Embedding& Modeling of FET Devices

Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; K. Kanaya ; S. Goto ; Morteza Abbasi (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
73rd ARFTG Microwave Measurement Conference Spring 2009 - Practical Applications of Nonlinear Measurements; Boston, MA; United States; 12 June 2009 through 12 June 2009 p. 28-31. (2009)
[Konferensbidrag, refereegranskat]

At millimetre wave frequencies, deembedding techniques start to fail due to larger uncertainty in measurements. In this paper, various pads-transistor transitions are being analysed and measured. The usage of measurement versus simulation based characterisation of the embedding layout is evaluated. Applying suggested measuring, modelling extraction procedure, results up to 220 GHz are demonstrated.

Nyckelord: FET, Microstrip, SS and LS Models

Denna post skapades 2010-03-22. Senast ändrad 2017-11-30.
CPL Pubid: 118213


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik


Elektroteknik och elektronik

Chalmers infrastruktur