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High carrier mobility in low band gap polymer-based field-effect transistors

Miaoxiang Chen ; Xavier Crispin ; Erik Perzon (Institutionen för kemi- och bioteknik, Polymerteknologi) ; Mats R. Andersson (Institutionen för kemi- och bioteknik, Polymerteknologi) ; Tonu Pullerits ; Mattias Andersson ; Olle Inganas ; Magnus Berggren
Applied Physics Letters Vol. 87 (2005), 25, p. 252105/1-252105/3.
[Artikel, refereegranskad vetenskaplig]

A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing IR light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is soln.-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm2 V-1 s-1. [on SciFinder (R)]



Denna post skapades 2006-08-25.
CPL Pubid: 11760

 

Institutioner (Chalmers)

Institutionen för kemi- och bioteknik, Polymerteknologi (2005-2014)

Ämnesområden

Halvledarfysik
Polymerkemi

Chalmers infrastruktur