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Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

H. D. B. Gottlob ; M. Schmidt ; A. Stefani ; M. C. Lemme ; H. Kurz ; I. Z. Mitrovic ; W. M. Davey ; S. Hall ; M. Werner ; P. R. Chalker ; K. Cherkaoui ; P. K. Hurley ; Johan Piscator (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Olof Engström (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; S. B. Newcomb
Microelectronic Engineering (0167-9317). Vol. 86 (2009), 7-9, p. 1642-1645.
[Artikel, refereegranskad vetenskaplig]

We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd2O3) from a silicon oxide (SiO2) interlayer specifically prepared for this purpose. We report on the scaling potential based on detailed material analysis. Gate leakage current densities and EOT values are compatible with an ITRS requirement for low stand by power (LSTP). The applicability of this GdSiO process is demonstrated by fully functional silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs). (C) 2009 Elsevier B.V. All rights reserved.

Nyckelord: High-k dielectric, Rare earth silicate, Gate first integration, Silicate formation, gate dielectrics, si(001), gd2o3, model

16th Biennial Conference on Insulating Films on Semiconductors Cambridge Univ, Clare Coll, Cambridge, ENGLAND, JUN 28-JUL 07, 2009

Denna post skapades 2010-02-26. Senast ändrad 2010-02-26.
CPL Pubid: 115519


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)



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