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Stationary and dispersive features in resonant inelastic soft X-ray scattering at the Ge 3p resonances

C. J. Glover ; T. Schmitt ; M. Mattesini ; Martin Adell (Institutionen för teknisk fysik, Fasta tillståndets fysik) ; Lars Ilver (Institutionen för teknisk fysik, Fasta tillståndets fysik) ; Janusz Kanski (Institutionen för teknisk fysik, Fasta tillståndets fysik) ; L. Kjeldgaard ; M. Agaker ; N. Martensson ; R. Ahuja ; J. Nordgren ; J. E. Rubensson
Journal of Electron Spectroscopy and Related Phenomena (0368-2048). Vol. 173 (2009), 2-3, p. 103-107.
[Artikel, refereegranskad vetenskaplig]

Resonant inelastic soft X-ray scattering at the 3p resonances in crystalline Ge is presented. Both stationary and dispersive features are observed in a wide energy range above as well as below the ionization limits. These observations are in agreement with theoretical predictions based on a two-step model where the initially excited electron has no influence on the emission step. Excess population of states in the conduction band is found, and discussed in terms of attosecond electron dynamics. (c) 2009 Elsevier B.V. All rights reserved.

Nyckelord: Soft X-ray scattering (RIXS), Ultrafast dynamics, Semiconductors, Spectroscopy, Synchrotron radiation, raman-scattering, dynamics, spectra, solids, edge



Denna post skapades 2010-02-26.
CPL Pubid: 115369

 

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Institutioner (Chalmers)

Institutionen för teknisk fysik, Fasta tillståndets fysik (2005-2015)

Ämnesområden

Teknisk fysik

Chalmers infrastruktur