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The Matrix Balun - A Transistor-Based Module for Broadband Applications

Mattias Ferndahl (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Hans-Olof Vickes (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
IEEE Transactions on Microwave Theory and Techniques (0018-9480). Vol. 57 (2009), 1, p. 53-60.
[Artikel, refereegranskad vetenskaplig]

In this paper the analysis and design of a new active balun with very broadband performance, the matrix balun, are reported. Measured results show a common mode rejection ratio, CMRR, larger than 15 dB between 4 and 42 GHz while exhibiting 2 dB single-ended gain with a ripple of 1 dB. The balun was realized in a 0.15 mu m GaAs mHEMT process. It occupies a chip area of 0.63 mm(2) and consumes a do power of 20 mW. The same matrix balun circuit may also be biased for amplification and used as a matrix amplifier. The circuit then exhibits 10.5 dB gain up to 63 GHz with 1 dB ripple above 5.5 GHz and a power consumption of 67 mW.

Nyckelord: Balun, broadband, active balun, amplifier, design, gain



Denna post skapades 2010-02-24. Senast ändrad 2010-07-20.
CPL Pubid: 114709

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Elektronik

Chalmers infrastruktur