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Fully Integrated 60-GHz Single-Ended Resistive Mixer in 90-nm CMOS Technology

Bahar M. Motlagh (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Sten E. Gunnarsson (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Mattias Ferndahl (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Herbert Zirath (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Microwave and Wireless Components Letters, IEEE Vol. 16 (2005), 1, p. 25-27.
[Artikel, refereegranskad vetenskaplig]

This letter presents the design and characterization of a fully integrated 60-GHz single-ended resistive mixer in a 90-nm CMOS technology. A conversion loss of 11.6dB, 1-dB compression point of 6dBm and IIP3 of 16.5dBm were measured with a local oscillator (LO) power of 4dBm and zero drain bias. The possibility of improvement in IIP3 with selective drain bias has been verified. A 3-dB improvement in IIP3 was obtained with 150-mV dc voltage applied at the drain. Microstrip transmission lines are used to realize matching and filtering at LO and radio frequency ports.



Denna post skapades 2006-12-21. Senast ändrad 2017-03-21.
CPL Pubid: 11455