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Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects

G. Crupi ; Dmmp Schreurs ; A. Caddemi ; Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; M. Homayouni ; A. Raffo ; G. Vannini ; B. Parvais
Microelectronic Engineering (0167-9317). Vol. 86 (2009), 11, p. 2283-2289.
[Artikel, refereegranskad vetenskaplig]

An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency. (C) 2009 Elsevier B.V. All rights reserved.

Nyckelord: FinFET, Large signal network analyzer, Nonlinear model, Non-quasi-static effects, Semiconductor device modeling, large-signal measurements, parameter extraction, fet model, mosfets, accurate, device

Denna post skapades 2010-02-24.
CPL Pubid: 114529


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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



Chalmers infrastruktur