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Effects of growth temperature and post-growth thermal annealing on carrier localization and deep level emission in GaNAs/GaAs quantum well structures

Qingxiang Zhao ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Wei Yongqiang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Mahdad Sadeghi (Institutionen för mikroteknologi och nanovetenskap) ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Magnus Willander
Applied Physics Letters (0003-6951). Vol. 86 (2005), p. 121910.
[Artikel, refereegranskad vetenskaplig]

We report results from investigation of the optical properties of GaNAs/GaAs quantum well structures. The structures were grown by molecular-beam epitaxy at different temperatures, and subsequently postgrowth thermal treatments at different temperature were performed. The results show that the carrier localization is smaller in a structure grown at a temperature of 580 °C in comparison with a structure grown at 450 °C. Both structures also show a broaden deep level emission band. Furthermore, the deep level emission band and the carrier localization effect can be removed by thermal annealing at 650 °C in the structure grown at 450 °C. The structure quality and radiative recombination efficiency are significantly improved after annealing. However, annealing under the same condition has a negligible effect on the structure grown at 580 °C.

Denna post skapades 2006-08-29. Senast ändrad 2016-04-11.
CPL Pubid: 11320


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