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Effects of Self-Heating on Planar Heterostructure Barrier Varactor Diodes

Jan Stake (Institutionen för mikrovågsteknik) ; Lars Dillner (Institutionen för mikrovågsteknik) ; Stephen Jones ; Chris Mann ; J. Thornton ; J.R. Jones ; W.L. Bishop ; Erik L. Kollberg (Institutionen för mikroelektronik)
IEEE Transactions on Electron Devices Vol. 45 (1998), 11, p. 2298-2303.
[Artikel, refereegranskad vetenskaplig]

The conversion efficiency for planar Al0.7GaAs-GaAs heterostructure barrier varactor triplers is shown to be reduced from a theoretical efficiency of 10% to 3% due to self-heating. The reduction is in accordance with measurements on planar Al0.7GaAs-GaAs heterostructure barrier varactor (HBV) triplers to 261 GHz at room temperature and with low temperature tripler measurements to 255 GHz. The delivered maximum output power at 261 GHz is 2.0 mW. Future HBV designs should carefully consider and reduce the device thermal resistance and parasitic series resistance. Optimization of the RF circuit for a 10 ?m diameter device yielded a delivered output power of 3.6 mW (2.5% conversion efficiency) at 234 GHz

Nyckelord: HBV, varactor frequency tripler



Denna post skapades 2006-09-19. Senast ändrad 2014-09-02.
CPL Pubid: 10585

 

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Institutioner (Chalmers)

Institutionen för mikrovågsteknik (1900-2003)
Institutionen för mikroelektronik (1995-2003)

Ämnesområden

Elektroteknik
Elektronik

Chalmers infrastruktur

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