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Independent determination of In and N concentrations in GaInNAs alloys

W Lu ; J.J. Lim ; S. Bull ; A.V. Andrianov ; C. Staddon ; Tom Foxon ; Mahdad Sadeghi (Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet) ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Eric Larkins
Semiconductor Science and Technology (0268-1242). Vol. 24 (2009), 10, p. 105016.
[Artikel, refereegranskad vetenskaplig]

High-resolution x-ray diffraction (HRXRD) and photoreflectance ( PR) spectroscopy were used to independently determine the In and N concentrations in GaInNAs alloys grown by solid-source molecular beam epitaxy (SSMBE). The lattice constant and bandgap energy can be expressed as two independent equations in terms of the In and N concentrations, respectively. The HRXRD measurement provided the lattice constant and the PR measurement extracted the bandgap energy. By simultaneously solving these two equations, we have determined the In and N concentrations with the error as small as 0.001.



Denna post skapades 2010-01-07. Senast ändrad 2016-04-11.
CPL Pubid: 105807

 

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