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Effects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates

Yuxin Song (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Ivar Tångring (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Zonghe Lai (Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet) ; Mahdad Sadeghi (Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet)
Journal of Applied Physics (0021-8979). Vol. 106 (2009), 12, p. 123531.
[Artikel, refereegranskad vetenskaplig]

We investigate the effects of doping and grading slope on the surface and structure of linearly alloy graded InGaAs buffers. It is found that the Be doping can improve material properties, resulting in smaller surface roughness and a lower threading dislocation density, while the Si doping has an opposite effect. The effect is strongly dependent on the grading slope. A moderate In grading slope is preferable for the strain relaxation and the minimization of the negative effect of Si doping. Physical mechanisms are proposed to explain the experimental observations. Since doping is essential for many types of optoelectronic devices, these results are valuable for improving the material properties and performance of metamorphic devices.

Nyckelord: Metamorphic, doping, dislocation, surface morphology, GaAs, MBE



Denna post skapades 2010-01-07.
CPL Pubid: 105773

 

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