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A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy

Ivar Tångring (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Yuxin Song (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Zonghe Lai (Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet) ; Shumin Wang (Institutionen för mikroteknologi och nanovetenskap, Fotonik) ; Mahdad Sadeghi (Institutionen för mikroteknologi och nanovetenskap, Nanotekniklaboratoriet) ; Anders Larsson (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Journal of Crystal Growth (0022-0248). Vol. 311 (2009), p. 1684.
[Artikel, refereegranskad vetenskaplig]

We investigate the role of p- and n-type doping in strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy. It is found that p-type Be-doping can improve material properties, resulting in smaller surface roughness and lower threading dislocation density, while n-type Si-doping has an opposite effect. The effect is strongly dependent on the grading profile, with linear grading showing small differences, while there is a significant difference when an exponential grading is used. Since doping is essential for many types of devices, these results are useful for improving the material properties and performance of metamorphic devices.

Nyckelord: Dislocations, Doping, Molecular beam epitaxy, Semiconducting III–V materials



Denna post skapades 2010-01-07. Senast ändrad 2016-04-11.
CPL Pubid: 105762