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On the Large-Signal Modelling of AlGaN/GaN HEMTs; GaAs ; and SiC MESFETs - Invited

Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Fotonik)
Target Tutorial QS Modeling Vol. April (2005), 2005,
[Konferensbidrag, refereegranskat]

Abstract. A general purpose LS model for GaAs, GaN and SiC FET devices was developed and evaluated with DC, S, and Large Signal measurements (LS). The FET model is generalized and extended with new feature in order to improve the management of harmonics, provide a more physical treatment of the dispersion as well as delay and model other specific effects in these devices. The model was implemented in a commercial CAD tool and exhibit good overall accuracy.



Denna post skapades 2006-08-29. Senast ändrad 2007-04-11.
CPL Pubid: 10438

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fotonik

Ämnesområden

Beräkningsfysik

Chalmers infrastruktur