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Boron impurity at the Si/SiO2 interface in SOI wafers and consequences for piezoresistive MEMS devices

Alexandra Nafari (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; David Karlén (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem ; Extern) ; Cristina Rusu ; Krister Svensson ; Peter Enoksson (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem)
Journal of Micromechanics and Microengineering (0960-1317). Vol. 19 (2009), 1, p. 6.
[Artikel, refereegranskad vetenskaplig]

In this work, the electrical performance of piezoresistive devices fabricated on thinned SOI wafers has been investigated. Specifically, SOI wafers manufactured with the standard bond-and-etch back method (BESOI), commonly used for MEMS fabrication, have been studied. Results from electrical measurements and SIMS characterization show the presence of a boron impurity close to the buried oxide, even on unprocessed wafers. If the boron impurity overlaps with the piezoresistors on the device, it can create non-defined pn-junctions and thus allow conduction through the substrate, leading to stray connections and excessive noise. The thickness of the boron impurity can extend up to several μm, thus setting a thickness limit for the thinnest parts of a MEMS device. This work shows how this impurity can fundamentally affect the functionality of piezoresistive devices. Design rules of how to avoid this are presented

Nyckelord: Piezoresistive, MEMS, SOI, Boron impurity

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Denna post skapades 2009-12-18. Senast ändrad 2014-01-17.
CPL Pubid: 104237


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Bionanosystem (2007-2015)


Nanovetenskap och nanoteknik
Övrig elektroteknik, elektronik och fotonik

Chalmers infrastruktur

NFL/Myfab (Nanofabrication Laboratory)

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